Magnetostrain and Magnetization of the Ni50Mn27.5Ga22.5 Single Crystal
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Abstract
Giant magnetic field induced strain (MFIS) up to 6.2% is achieved in the Ni50Mn27.5Ga22.5 single crystals with 5M martensitic structure at room temperature. The switching magnetic field was about 2.4kOe for the magnetostrain. A `magnetization jump’ effect in the switching field applied along the initially hard direction confirms the occurrence of the large magnetostrain. The temperature dependence of the magnetostrain is investigated in lower temperature range. A linear decrease of the magnetostrain is observed with increasing temperature, but a strong decrease is monitored near the reverse martensitic transformation temperature.
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WANG Jing-Min, WANG Yu-Fei, JIANG Cheng-Bao, XU Hui-Bin. Magnetostrain and Magnetization of the Ni50Mn27.5Ga22.5 Single Crystal[J]. Chin. Phys. Lett., 2006, 23(5): 1293-1295.
WANG Jing-Min, WANG Yu-Fei, JIANG Cheng-Bao, XU Hui-Bin. Magnetostrain and Magnetization of the Ni50Mn27.5Ga22.5 Single Crystal[J]. Chin. Phys. Lett., 2006, 23(5): 1293-1295.
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WANG Jing-Min, WANG Yu-Fei, JIANG Cheng-Bao, XU Hui-Bin. Magnetostrain and Magnetization of the Ni50Mn27.5Ga22.5 Single Crystal[J]. Chin. Phys. Lett., 2006, 23(5): 1293-1295.
WANG Jing-Min, WANG Yu-Fei, JIANG Cheng-Bao, XU Hui-Bin. Magnetostrain and Magnetization of the Ni50Mn27.5Ga22.5 Single Crystal[J]. Chin. Phys. Lett., 2006, 23(5): 1293-1295.
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