X-Ray Photoelectron Spectroscopy Analysis of the Electron BeamTreated SiC Films Before and After Hydrogen Ion Irradiation

SiC films deposited with rf magnetron sputtering followed by electron beam alloying were irradiated by hydrogen ion with an energy of 5 keV and a dose of 1 x 10¹⁸ ions/cm². The x-ray photoelectron spectroscopy analysis was used to investigate the irradiation effects of hydrogen ion on SiC. The results show that hydrogen ion irradiation can cause preferential sputtering of component of SiC, and activated carbon can react chemically with hydrogen to form hydrocarbon species such as methane. The related mechanism is discussed.