Electroluminescence of Boron and Nitrogen Doped Diamond Thin Films
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WANG Xiao-Ping,
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WANG Li-Jun,
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ZHANG Bing-Lin,
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YAO Ning,
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MA Hui-Zhong,
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SONG Tian-Fu,
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LI Guang-Ting,
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YANG Shi-E,
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BIAN Chao,
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LI Hui-Jun,
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MA Bing-Xian
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Abstract
An electroluminescence (EL) device is investigated by using boron and nitrogen double-doped diamond films. The characteristics of the EL spectrum and the dependence of EL intensity on boron and nitrogen impurity are investigated. The experiment indicated that the intensity of EL increases obviously and the threshold voltage decreases with increasing nitrogen impurity within our doped level, meanwhile the highest emission line changes from the blue region (peaks at 470 nm) to the yellow region (peaks at 584 nm).
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Cite this article:
WANG Xiao-Ping, WANG Li-Jun, ZHANG Bing-Lin, YAO Ning, MA Hui-Zhong, SONG Tian-Fu, LI Guang-Ting, YANG Shi-E, BIAN Chao, LI Hui-Jun, MA Bing-Xian. Electroluminescence of Boron and Nitrogen Doped Diamond Thin Films[J]. Chin. Phys. Lett., 2002, 19(5): 717-719.
WANG Xiao-Ping, WANG Li-Jun, ZHANG Bing-Lin, YAO Ning, MA Hui-Zhong, SONG Tian-Fu, LI Guang-Ting, YANG Shi-E, BIAN Chao, LI Hui-Jun, MA Bing-Xian. Electroluminescence of Boron and Nitrogen Doped Diamond Thin Films[J]. Chin. Phys. Lett., 2002, 19(5): 717-719.
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WANG Xiao-Ping, WANG Li-Jun, ZHANG Bing-Lin, YAO Ning, MA Hui-Zhong, SONG Tian-Fu, LI Guang-Ting, YANG Shi-E, BIAN Chao, LI Hui-Jun, MA Bing-Xian. Electroluminescence of Boron and Nitrogen Doped Diamond Thin Films[J]. Chin. Phys. Lett., 2002, 19(5): 717-719.
WANG Xiao-Ping, WANG Li-Jun, ZHANG Bing-Lin, YAO Ning, MA Hui-Zhong, SONG Tian-Fu, LI Guang-Ting, YANG Shi-E, BIAN Chao, LI Hui-Jun, MA Bing-Xian. Electroluminescence of Boron and Nitrogen Doped Diamond Thin Films[J]. Chin. Phys. Lett., 2002, 19(5): 717-719.
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