Secondary-Electron Emission Effects in Plasma Immersion Ion Implantation with Dielectric Substrates
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Abstract
Using a dynamic sheath model, we have studied the secondary-electron emission effects at one-dimensional planar dielectric surface in plasma immersion ion implantation. The temporal evolution of the sheath thickness, the surface potential of dielectric, and the ions dose accumulated on the dielectric surface are obtained. The numerical results demonstrate that the charging effects is greatly enhanced by the secondary electron emission effects, so the sheath thickness becomes thinner, the surface potential of dielectric decreases fast and the ions dose accumulated on the dielectric surface significantly increases.
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LI Xue-Chun, WANG You-Nian. Secondary-Electron Emission Effects in Plasma Immersion Ion Implantation with Dielectric Substrates[J]. Chin. Phys. Lett., 2004, 21(2): 364-366.
LI Xue-Chun, WANG You-Nian. Secondary-Electron Emission Effects in Plasma Immersion Ion Implantation with Dielectric Substrates[J]. Chin. Phys. Lett., 2004, 21(2): 364-366.
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LI Xue-Chun, WANG You-Nian. Secondary-Electron Emission Effects in Plasma Immersion Ion Implantation with Dielectric Substrates[J]. Chin. Phys. Lett., 2004, 21(2): 364-366.
LI Xue-Chun, WANG You-Nian. Secondary-Electron Emission Effects in Plasma Immersion Ion Implantation with Dielectric Substrates[J]. Chin. Phys. Lett., 2004, 21(2): 364-366.
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