Trap Behaviors of Constant Electric Field Stressing in Thin Oxynitride and Re-oxidized Oxynitride Films
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Abstract
The behaviors of constant electric field stressing of the thin (200Å) oxynitride and re-oxidized oxynitride films are investigated. The flat-band shift is not a simple function of the stressing field. The observed phenomena are attributed to the significance of trap filling, electronic tunneling and trap generation at different stressing field strengths. Re-oxidized sample is found to have high resistant to the electron tunneling and trap generation.
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YANG Bingliang (B. L. Yang), LIU Baiyong (B. Y. Liu), H. Wong, Y. C. Cheng. Trap Behaviors of Constant Electric Field Stressing in Thin Oxynitride and Re-oxidized Oxynitride Films[J]. Chin. Phys. Lett., 1992, 9(9): 479-482.
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YANG Bingliang (B. L. Yang), LIU Baiyong (B. Y. Liu), H. Wong, Y. C. Cheng. Trap Behaviors of Constant Electric Field Stressing in Thin Oxynitride and Re-oxidized Oxynitride Films[J]. Chin. Phys. Lett., 1992, 9(9): 479-482.
|
YANG Bingliang (B. L. Yang), LIU Baiyong (B. Y. Liu), H. Wong, Y. C. Cheng. Trap Behaviors of Constant Electric Field Stressing in Thin Oxynitride and Re-oxidized Oxynitride Films[J]. Chin. Phys. Lett., 1992, 9(9): 479-482.
|
YANG Bingliang (B. L. Yang), LIU Baiyong (B. Y. Liu), H. Wong, Y. C. Cheng. Trap Behaviors of Constant Electric Field Stressing in Thin Oxynitride and Re-oxidized Oxynitride Films[J]. Chin. Phys. Lett., 1992, 9(9): 479-482.
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