THE STRUCTURE AND ELECTRONIC STATES OF NiSi2/Si(lll) INTERFACES
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Abstract
A theoretical investigation of NiSi2/Si (111) interfaces using empirical tight binding method and Slab Model is presented. The positions of Fermi level Ef for various types of interfaces has been compared. The heights of Ef for type-I(a) and type-II(a) or for type-I(b) and type-II(b) are the same; but there exists a difference of 0.leV between type-I(a) and -I(b) as well as for type-II(a) and -II(b). The local densities of states of some typical layers in the slab have also been studied.
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XU Yongnian, ZHANG Kaiming, XIE Xide. THE STRUCTURE AND ELECTRONIC STATES OF NiSi2/Si(lll) INTERFACES[J]. Chin. Phys. Lett., 1986, 3(2): 89-92.
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XU Yongnian, ZHANG Kaiming, XIE Xide. THE STRUCTURE AND ELECTRONIC STATES OF NiSi2/Si(lll) INTERFACES[J]. Chin. Phys. Lett., 1986, 3(2): 89-92.
|
XU Yongnian, ZHANG Kaiming, XIE Xide. THE STRUCTURE AND ELECTRONIC STATES OF NiSi2/Si(lll) INTERFACES[J]. Chin. Phys. Lett., 1986, 3(2): 89-92.
|
XU Yongnian, ZHANG Kaiming, XIE Xide. THE STRUCTURE AND ELECTRONIC STATES OF NiSi2/Si(lll) INTERFACES[J]. Chin. Phys. Lett., 1986, 3(2): 89-92.
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