Nonlinear Electrical Behaviour of the TiO₂.Sb₂O₃ System

The Sb₂O₃-doped TiO₂ varistors were obtained by conventional ceramic processing. The 0.75 mol%Sb₂O₃.99.25mol%TiO₂ varistor has a nonlinear coefficient α = 7 and a minimum breakdown electrical field of 6V/mm. The nonlinear electrical behaviour of TiO₂.Sb₂O₃ ceramics was explained by the introduction of defects in the crystal lattice that are responsible for the formation of Schottky potential barriers at grain boundaries.