Fabrication and Characterization of Nanocrystalline VO_2 Thin Films
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Abstract
Nanocrystalline VO2 films with phase transition temperature 34°C have been fabricated on Si3N4-film-coated silicon and quartz substrates by argon-annealing films of metastable VO2(B). The original VO2(B) films are obtained by ion beam sputtering in an argon-oxygen atmosphere at 200°C. The nanocrystalline VO2 films exhibit strong changes in electrical and optical properties when a phase transition is completed. The phase transition temperature in the as-fabricated samples is about 34°C, which is smaller in comparison with 68°C in the single-crystalline VO2 material. A lower phase transition temperature is favorable for device applications such as smart window coating and low power consumption optical switching.
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WANG Hong-Chen, YI Xin-Jian, LAI Jian-Jun, LI Yi. Fabrication and Characterization of Nanocrystalline VO$_{2}$ Thin Films[J]. Chin. Phys. Lett., 2005, 22(7): 1746-1748.
WANG Hong-Chen, YI Xin-Jian, LAI Jian-Jun, LI Yi. Fabrication and Characterization of Nanocrystalline VO$_{2}$ Thin Films[J]. Chin. Phys. Lett., 2005, 22(7): 1746-1748.
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WANG Hong-Chen, YI Xin-Jian, LAI Jian-Jun, LI Yi. Fabrication and Characterization of Nanocrystalline VO$_{2}$ Thin Films[J]. Chin. Phys. Lett., 2005, 22(7): 1746-1748.
WANG Hong-Chen, YI Xin-Jian, LAI Jian-Jun, LI Yi. Fabrication and Characterization of Nanocrystalline VO$_{2}$ Thin Films[J]. Chin. Phys. Lett., 2005, 22(7): 1746-1748.
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