Diffusion of Ion Implanted As in Si_1-xGe_x Epilayers

Diffusion of implanted As ion in relaxed Si_1-xGe_x was studied as a function of Ge content over a wide range of Ge fractions (0-43%) and annealing temperature, and was compared to diffusion in Si. Experimental results showed that the As diffusion is enhanced with increasing annealing temperature for certain Ge content and strongly dependent on the higher Ge content and the faster As diffusion.