Structural and Electrical Characteristics of Pb(Zr_0.53,Ti_0.47)O₃ Thin Films Deposited on Si (100) Substrates

Pb(Zr_0.53,Ti_0.47)O₃ (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only (110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C--V) and current versus voltage (I--V) measurements. The clockwise trace of the C--V curve shows ferroelectric polarization switching, as is expected. From the I--V curves, the Schottky emission and space-charge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively.