Polycrystalline β-C3N4 Thin Films Deposited on Single-Crystal KCl(100) Using rf Sputtering
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Abstract
The carbon-nitride thin films were deposited on the (100) oriented single-crystal KCl wafers at ambient temperatures by using rf-plasma sputtering. The IR spectrum showed that the films contained carbon-nitride bonds. The transmission electron microscopy (TEM) and x.-ray diffraction (XRD) measurements indicated the existence of predicted polycrystalline β-C3N4 films on the KCl(I00) wafers. And the TEM and XRD measured lattice spacings well match the calculated data.
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ZHANG Ze-bo, LI Yin-an, XIE Si-shen, YANG Guo-zhen. Polycrystalline β-C3N4 Thin Films Deposited on Single-Crystal KCl(100) Using rf Sputtering[J]. Chin. Phys. Lett., 1996, 13(1): 69-72.
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ZHANG Ze-bo, LI Yin-an, XIE Si-shen, YANG Guo-zhen. Polycrystalline β-C3N4 Thin Films Deposited on Single-Crystal KCl(100) Using rf Sputtering[J]. Chin. Phys. Lett., 1996, 13(1): 69-72.
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ZHANG Ze-bo, LI Yin-an, XIE Si-shen, YANG Guo-zhen. Polycrystalline β-C3N4 Thin Films Deposited on Single-Crystal KCl(100) Using rf Sputtering[J]. Chin. Phys. Lett., 1996, 13(1): 69-72.
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ZHANG Ze-bo, LI Yin-an, XIE Si-shen, YANG Guo-zhen. Polycrystalline β-C3N4 Thin Films Deposited on Single-Crystal KCl(100) Using rf Sputtering[J]. Chin. Phys. Lett., 1996, 13(1): 69-72.
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