Dislocation Movement in Nitrogen-Doped Czochralski Silicon

Dislocation movement in N-doped Czochralski silicon ( Cz-Si ) was surveyed by four point bend method, Dislocation movement velocities in Cz-Si doped with nitrogen, with both nitrogen and antimony, and with only antimony were investigated, The order of measured dislocation movement velocities, at 700°C ≤ T≤ 800°C and under resolved stress σ = 4.1 kg/ mm², was V_sb,O >V_N,sb,O >V_N,O. The experiments showed that nitrogen doping could retard the movement of dislocations.