Characterization of Pb( Zr_0.53Ti_0.47)O₃ Films on GaN

GaN/Pb(Zr_0.53Ti_0.47)O₃ structures have been fabricated by light radiation heating low-pressure metal-organic chemical deposition and pulsed laser deposition. These structures show leakage current lower than 10^-11A at applied voltage of 5 V. X-ray diffraction shows that ferroelectric Pb (Zr_0.53Ti_0.47)O₃ films directly on GaN are well crystallized with perovskite structure. Because of the high thermal stability and relatively smaller mismatch between GaN and ferroelectrics in comparison with that of Si/ferroelectric structures, GaN looks like more promising as semiconductor active layer for metal-ferroelectric-semiconductor field effect transistors.