Optical and Electric and Structural Properties of Ti_l-xAI_xN Thin Films

A sequence of Ti_l-xAI_xN films has been prepared by rf reactive magnetron sputtering. The optical and electric properties versus aluminum content x have been studied. Values suitable for magneto-optic protective layers have been achieved in Ti_l-xAI_x N thin films with aluminum content x > 0.75. X-ray diffraction results show that Ti_l-xAI_x N thin films in this study are a bcc structure up to x = 0.75, further increase in the aluminum content gives a wurtzite structure. All of the results show that the optical and electric properties of Ti_l-xAI_x N films might be related to the crystal structure.