Application of Electron Cyclotron Resonance Assisted Plasma in GaN Deposition

An electron cyclotron resonance assisted plasma with N₂ being the plasma source gas was employed to deposit hexagonal GaN on (0001) surface of α-Al₂O₃ substrate. By special gas distributor, trimethgallium was introduced into reactant zone. A 10 ×10mm uniform GaN film was gained with relatively low deposition temperature, 560°C, and high growth rate of 1.4μm/h. A good crystal microstructure was confirmed by its spectrum with full width at half maximum of 15 arcmin.