Preparation and Properties of Evaporated CdTe and All Thin Film CdTe/CdS Solar Cells
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Abstract
Cadmium telluride thin films were prepared by vacuum evaporation of CdTe powder in an attempt to fabricate all thin film solar cells of the type CdTe/CdS. Characterization of CdTe has shown it to have a band gap of 1.522eV and a resistivity of 22Ω-cm. As prepared, solar cells exhibited low values of output parameters. Given quantity of copper was then deposited on top of the CdTe/CdS solar cells and the whole system was annealed at 350°C. This copper doping changed the output parameters favorably with a maximum efficiency of 1.9%.
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Shahzad Naseem. Preparation and Properties of Evaporated CdTe and All Thin Film CdTe/CdS Solar Cells[J]. Chin. Phys. Lett., 1991, 8(5): 255-258.
Shahzad Naseem. Preparation and Properties of Evaporated CdTe and All Thin Film CdTe/CdS Solar Cells[J]. Chin. Phys. Lett., 1991, 8(5): 255-258.
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Shahzad Naseem. Preparation and Properties of Evaporated CdTe and All Thin Film CdTe/CdS Solar Cells[J]. Chin. Phys. Lett., 1991, 8(5): 255-258.
Shahzad Naseem. Preparation and Properties of Evaporated CdTe and All Thin Film CdTe/CdS Solar Cells[J]. Chin. Phys. Lett., 1991, 8(5): 255-258.
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