Atomic Force Microscopy on the Ga_0.l6In_0.84As_0.80Sb_0.20Epilayer Grown by Metalorganic Chemical Vapor Deposition

The atomic force microscopy study was made on the quaternary Ga_0.l6In_0.84As_0.80Sb_0.20 epilayer prepared on GaSb substrate by metalorganic chemical vapor deposition. The island-like defects were found on the substrate surface pretreated chemically. With the growth process going, these island-like defects could be buried by the epilayer. In the initial stage, two-dimensional-growth-mode was followed. When the epilayer thickness reached 70nm, three-dimensional (3D)-growth-mode occurred and the perfect 3D islands were observed.