Light Emitting Diode Based on Tb(AcAc)3Phen
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Abstract
A diode with Tb(AcAc)3Phen as the emitting layer and PPV, Alq3 as the hole and electron transporting layers was demonstrated. The emission of the diode had the unique line spectrum of pure Tb3+. The injected electron and hole recombination region was discussed.
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CHEN Li-chun, WANG Xiang-jun, ZHANG Ruo-hua, DENG Zhen-bo, YAO Jian-quan, Jennifer Carter. Light Emitting Diode Based on Tb(AcAc)3Phen[J]. Chin. Phys. Lett., 1997, 14(1): 71-73.
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CHEN Li-chun, WANG Xiang-jun, ZHANG Ruo-hua, DENG Zhen-bo, YAO Jian-quan, Jennifer Carter. Light Emitting Diode Based on Tb(AcAc)3Phen[J]. Chin. Phys. Lett., 1997, 14(1): 71-73.
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CHEN Li-chun, WANG Xiang-jun, ZHANG Ruo-hua, DENG Zhen-bo, YAO Jian-quan, Jennifer Carter. Light Emitting Diode Based on Tb(AcAc)3Phen[J]. Chin. Phys. Lett., 1997, 14(1): 71-73.
|
CHEN Li-chun, WANG Xiang-jun, ZHANG Ruo-hua, DENG Zhen-bo, YAO Jian-quan, Jennifer Carter. Light Emitting Diode Based on Tb(AcAc)3Phen[J]. Chin. Phys. Lett., 1997, 14(1): 71-73.
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