CHARACTERIZATION OF Si-SiO₂ INTERFACE STATES IN MOS CAPACITORS BY USING DLTS TECHNIQUE

The D_it (interface states density) in p-type MOS capacitors subjected to a preoxidation heat treatment was investigated by using DLTS (Deep Level Transient Spectroscopy) technique. It is found that the strong dependence of the D_it on POHT (Preoxidation Heat Treatment) and starting oxygen content of substrates is expected. The DLTS technique can detects the presence of bulk defect (E_t-E_v=0.29eV) at the interface presumably due to chlorine species.