Abnormal Alignment of Misfit Dislocations inIn0.52Al0.48As/InxGa1-xAs/In0.52AI0.48As/InP Heterostructure
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Abstract
It was observed with transmission electron microscopy in the In0.52Al0.48As/InxGa1-xAs/In0.52AI0.48As/InP heterostructure that misfit dislocation lines deviate from the <110> directions at a certain angle depending on the indium content x. Such an abnormal alignment of misfit dislocations is explained in terms of an alloy effect on the formation of single jogs on the misfit dislocations in the interface between the III-V ternary compounds.
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WU JU, LI Han-xuan, WANG Zhan-guo. Abnormal Alignment of Misfit Dislocations inIn0.52Al0.48As/InxGa1-xAs/In0.52AI0.48As/InP Heterostructure[J]. Chin. Phys. Lett., 1998, 15(1): 50-51.
WU JU, LI Han-xuan, WANG Zhan-guo. Abnormal Alignment of Misfit Dislocations inIn0.52Al0.48As/InxGa1-xAs/In0.52AI0.48As/InP Heterostructure[J]. Chin. Phys. Lett., 1998, 15(1): 50-51.
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WU JU, LI Han-xuan, WANG Zhan-guo. Abnormal Alignment of Misfit Dislocations inIn0.52Al0.48As/InxGa1-xAs/In0.52AI0.48As/InP Heterostructure[J]. Chin. Phys. Lett., 1998, 15(1): 50-51.
WU JU, LI Han-xuan, WANG Zhan-guo. Abnormal Alignment of Misfit Dislocations inIn0.52Al0.48As/InxGa1-xAs/In0.52AI0.48As/InP Heterostructure[J]. Chin. Phys. Lett., 1998, 15(1): 50-51.
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