Interaction Between Dopants and Native Defects in Zn Doped p-InP Observed by Positron Annihilation
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Abstract
Positron lifetime spectra were measured for three Zn doped p-InP samples as a function of temperature. Interaction of Zn dopants and native P vacancies was observed under thermal activation. It is found that the formation of Zn-Vp complex has a correlation with the carrier concentration. The formation mechanism of the complex was tentatively discussed.
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CHEN Zhi-quan, WANG Zhu, WANG Shao-jie. Interaction Between Dopants and Native Defects in Zn Doped p-InP Observed by Positron Annihilation[J]. Chin. Phys. Lett., 1999, 16(8): 586-588.
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CHEN Zhi-quan, WANG Zhu, WANG Shao-jie. Interaction Between Dopants and Native Defects in Zn Doped p-InP Observed by Positron Annihilation[J]. Chin. Phys. Lett., 1999, 16(8): 586-588.
|
CHEN Zhi-quan, WANG Zhu, WANG Shao-jie. Interaction Between Dopants and Native Defects in Zn Doped p-InP Observed by Positron Annihilation[J]. Chin. Phys. Lett., 1999, 16(8): 586-588.
|
CHEN Zhi-quan, WANG Zhu, WANG Shao-jie. Interaction Between Dopants and Native Defects in Zn Doped p-InP Observed by Positron Annihilation[J]. Chin. Phys. Lett., 1999, 16(8): 586-588.
|
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