Simulation of Nucleation of Anisotropic Si Islands on Reconstructed Si(100)(2x1) Surface

The nucleation of anisotropic Si islands on reconstructed Si(100)(2x1) surface has been studied by computer simulation, in which the anisotropic diffusion rate along different direction of the substrate is included. Some results such as anisotropic islands formed at various substrate temperatures, the number of islands (including single Si dimers) with different anisotropic diffusion are obtained. It is shown that the shape and number of anisotropic Si islands are dependent obviously on the substrate temperature and the anisotropic diffusion. The simulation results are consistent with the experimental observations.