Vertical Transport in GaAs/AlAs Superlattice with Weak Coupling Between Wells

Vertical transport I-V relations of type-I GaAs/A1As superlattices with doped wells and weak coupling between wells at 77K were investigated with quasistatic and dynamic method. Spontaneous current oscillations are also investigated. The domain formation time 70 ± 30 ns is directly measured. By using discrete-tunneling model, the key parameters of the relation between tunneling current and the bias between adjacent wells were quantitatively determined from the experimental data.