Gamma-Ray Irradiation Effects on Electroluminescence from Au/Extra Thin Si-Rich SiO₂ Film/p-Si Structures

We have studied the effects of γ-ray irradiation on electroluminescence (EL) from Au/extra thin Si-rich SiO₂ film/p-Si Structures. After γ-ray irradiation, for the structure with a 600°C annealed Si-rich SiO₂ film a new blue EL band with a peak at around 480nm was observed, and for the structure with a 300°C annealed Si-rich SiO₂ film the red EL band shifts from 670 to 660nm and its intensity and full width at half maximum increase pronouncedly. The experimental results demonstrate that the defects induced by γ-ray irradiation are responsible for the blue EL band as well as for the variations of the red EL band.