A New Method for Thin Film Deposition-Faced Microwave Electron Cyclotron Resonance Plasma Sources Enhanced Direct-Current Magnetron Sputtering

A new reactive magnetron sputtering system enhanced by the faced microwave electron cyclotron resonance plasma source was designed and amorphous CN_x films has been prepared by using this system. The characterization of the films by interference microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy shows that the deposition rate is strongly affected by the direct-current bias, and the films are composed by a single carbon nitride phase and the N/C ratio is 4:3.2, which is close to that of C₃N₄ (4:3).