AIN:TbF₃ Electroluminescence Thin Film Prepared by Radio-Frequency Magnetron Sputtering

High quality AlN thin films doped with TbF₃ were prepared by rf magnetron reaction sputtering. High purity AI metal and TbF₃ were used as target materials with N₂ and Ar as sputtering gases. The influence of preparation conditions on the photoluminescence brightness was studied, and the electroluminescence was found to have a similar dependence on the concentration of TbF₃ and substrate temperature. The characteristic emission of Tb³⁺ ions was obtained in an AIN:TbF₃ alternating current thin film electroluminescence device prepared with 600°C substrate temperature and 4.0mol% concentration of TbF₃.