Electron-Spectroscopy Study of Amorphous CN:Ti Films
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Abstract
Amorphous CN:Ti films deposited by using the reactive magnetron sputtering method were annealed in vacuum under 200 to 600°C. Incorporation of Ti (less than 3at.%) has brought some new perspectives to the material. Electron-energy-loss spectrum indicates improved conductivity in CN:Ti films as in the insulating CN films. The high-resolution core-level x-ray photoelectron spectroscopy (XPS) studies show that most carbon atoms form homeopolar bonding in as-deposited CN:Ti film. While the N Is line always shrinks with increasing annealing temperature, the total full width at half maximum of C Is line decreases only at annealing temperature over 300°C when the broadening due to heterobonding formation is outdone by the effect of increasing order. An enhanced π-band feature in the valence-XPS spectra at high annealing temperatures confirms the graphitization tendency of this material.
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CAO Ze-xian, GUO Jian-dong, WANG En-ge, LIU Feng-qin. Electron-Spectroscopy Study of Amorphous CN:Ti Films[J]. Chin. Phys. Lett., 1999, 16(12): 928-930.
CAO Ze-xian, GUO Jian-dong, WANG En-ge, LIU Feng-qin. Electron-Spectroscopy Study of Amorphous CN:Ti Films[J]. Chin. Phys. Lett., 1999, 16(12): 928-930.
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CAO Ze-xian, GUO Jian-dong, WANG En-ge, LIU Feng-qin. Electron-Spectroscopy Study of Amorphous CN:Ti Films[J]. Chin. Phys. Lett., 1999, 16(12): 928-930.
CAO Ze-xian, GUO Jian-dong, WANG En-ge, LIU Feng-qin. Electron-Spectroscopy Study of Amorphous CN:Ti Films[J]. Chin. Phys. Lett., 1999, 16(12): 928-930.
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