STUDY ON PERTURBATION LAYER OF SILICON WITH "MIRAGE EFFECT" TECHNIQUE
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Abstract
The relative changes of thermal diffusivity lengths in ion-implanted and unimplanted silicon wafers were studied with "mirage effect", i. e. OBD techique. The fundamental principle, experimental results and feasible explanation are presented.
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ZHANG Xiaorong, GAN Changming, LI Youzhi, GUAN Susheng, TAN Ruiling. STUDY ON PERTURBATION LAYER OF SILICON WITH "MIRAGE EFFECT" TECHNIQUE[J]. Chin. Phys. Lett., 1987, 4(5): 213-216.
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ZHANG Xiaorong, GAN Changming, LI Youzhi, GUAN Susheng, TAN Ruiling. STUDY ON PERTURBATION LAYER OF SILICON WITH "MIRAGE EFFECT" TECHNIQUE[J]. Chin. Phys. Lett., 1987, 4(5): 213-216.
|
ZHANG Xiaorong, GAN Changming, LI Youzhi, GUAN Susheng, TAN Ruiling. STUDY ON PERTURBATION LAYER OF SILICON WITH "MIRAGE EFFECT" TECHNIQUE[J]. Chin. Phys. Lett., 1987, 4(5): 213-216.
|
ZHANG Xiaorong, GAN Changming, LI Youzhi, GUAN Susheng, TAN Ruiling. STUDY ON PERTURBATION LAYER OF SILICON WITH "MIRAGE EFFECT" TECHNIQUE[J]. Chin. Phys. Lett., 1987, 4(5): 213-216.
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