Binding Energy of Ionized-Donor-Bound Excitons in the GaAs-AI_xGa_l-xAs Quant urn Wells

The binding energy of an exciton bound to an ionized donor impurity (D⁺, X ) located at the center or the edge in GaAs-AI_xGa_l-xAs quantum wells is calculated variationally for the well width from 10 to 300Å by using a two-parameter wave function, The theoretical results are discussed and compared with the previous experimental results.