Zirconium Aided Epitaxial Growth of In_xSe_y on InP(111) Substrates

Layered material indium selenide (In_xSe_y) is a promising candidate for building next-generation electronic and photonic devices. We report a zirconium aided MBE growth of this van der Waals material. When co-depositing zirconium and selenium onto an indium phosphide substrate with a substrate temperature of 400℃ at a constant zirconium flux rate of 0.01 ML/min, the polymorphic In_xSe_y layer emerges on top of the insulating ZrSe_2 layer. Different archetypes, such as InSe, \alpha-In_2Se_3 and \beta-In_2Se_3, are found in the In_xSe_y layers. A negative magnetoresistance of 40% at 2 K under 9 T magnetic field is observed. Such an In_xSe_y/ZrSe_2 heterostructure with good lattice-matching may serve as a candidate for device applications.