Zirconium Aided Epitaxial Growth of In_xSe_y on InP(111) Substrates

Cheng Zheng; Dapeng Zhao; Xinqiang Cai; Wantong Huang; Fanqi Meng; Qinghua Zhang; Lin Tang; Xiaopeng Hu; Lin Gu; Shuai-Hua Ji; Xi Chen

doi:10.1088/0256-307X/37/8/087401

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Express Letter

Zirconium Aided Epitaxial Growth of In $_{x}$ Se $_{y}$ on InP(111) Substrates

¹State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
²Beijing Academy of Quantum Information Sciences, Beijing 100193, China
³Laboratory for Advanced Materials & Electron Microscopy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
⁴RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan

Funds: Supported by the National Natural Science Foundation of China (Grant No. 11874233).

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Received Date: June 19, 2020

Published Date: July 31, 2020

Abstract

Abstract

Layered material indium selenide (In $_{x}$ Se $_{y}$ ) is a promising candidate for building next-generation electronic and photonic devices. We report a zirconium aided MBE growth of this van der Waals material. When co-depositing zirconium and selenium onto an indium phosphide substrate with a substrate temperature of 400℃ at a constant zirconium flux rate of 0.01 ML/min, the polymorphic In $_{x}$ Se $_{y}$ layer emerges on top of the insulating ZrSe $_{2}$ layer. Different archetypes, such as InSe, $\alpha$ -In $_{2}$ Se $_{3}$ and $\beta$ -In $_{2}$ Se $_{3}$ , are found in the In $_{x}$ Se $_{y}$ layers. A negative magnetoresistance of 40% at 2 K under 9 T magnetic field is observed. Such an In $_{x}$ Se $_{y}$ /ZrSe $_{2}$ heterostructure with good lattice-matching may serve as a candidate for device applications.

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Zirconium Aided Epitaxial Growth of In $_{x}$ Se $_{y}$ on InP(111) Substrates