de Haas–van Alphen Quantum Oscillations in BaSn_3 Superconductor with Multiple Dirac Fermions

Gaoning Zhang; Xianbiao Shi; Xiaolei Liu; Wei Xia; Hao Su; Leiming Chen; Xia Wang; Na Yu; Zhiqiang Zou; Weiwei Zhao; Yanfeng Guo

doi:10.1088/0256-307X/37/8/087101

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de Haas–van Alphen Quantum Oscillations in BaSn $_{3}$ Superconductor with Multiple Dirac Fermions

Gaoning Zhang^1†,
Xianbiao Shi^2,3†,
Xiaolei Liu^1†,
Wei Xia¹,
Hao Su¹,
Leiming Chen⁴,
Xia Wang^1,5,
Na Yu^1,5,
Zhiqiang Zou^1,5,
Weiwei Zhao^2,3*,
Yanfeng Guo^1,6*

¹School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
²State Key Laboratory of Advanced Welding & Joining and Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen 518055, China
³Key Laboratory of Micro-systems and Micro-structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150001, China
⁴School of Materials Science and Engineering, Henan Key Laboratory of Aeronautic Materials and Application Technology, Zhengzhou University of Aeronautics, Zhengzhou 450046, China
⁵Analytical Instrumentation Center, School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
⁶CAS Center for Excellence in Superconducting Electronics (CENSE), Chinese Academy of Sciences, Shanghai 200050, China

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Funds: Supported by the National Natural Science Foundation of China (Grant No. 11874264), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDA18000000), the Starting Grant of ShanghaiTech University, the Shenzhen Peacock Team Plan (Grant No. KQTD20170809110344233), the Bureau of Industry and Information Technology of Shenzhen through the Graphene Manufacturing Innovation Center (Grant No. 201901161514), the Key Scientific Research Projects of Higher Institutions in Henan Province (19A140018), and Analytical Instrumentation Center, SPST, ShanghaiTech University (Grant No. SPST-AIC10112914).

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Received Date: May 25, 2020

Published Date: July 31, 2020

Abstract

Abstract

Characterization of Fermi surface of the BaSn $_{3}$ superconductor ( $T_{\rm c} \sim 4.4$ K) by de Haas–van Alphen (dHvA) effect measurement reveals its non-trivial topological properties. Analysis of non-zero Berry phase is supported by the ab initio calculations, which reveals a type-II Dirac point setting and tilting along the high symmetric $K$ – $H$ line of the Brillouin zone, about 0.13 eV above the Fermi level, and other two type-I Dirac points on the high symmetric $\varGamma$ – $A$ direction, but slightly far below the Fermi level. The results demonstrate BaSn $_{3}$ as an excellent example hosting multiple Dirac fermions and an outstanding platform for studying the interplay between nontrivial topological states and superconductivity.

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de Haas–van Alphen Quantum Oscillations in BaSn $_{3}$ Superconductor with Multiple Dirac Fermions

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de Haas–van Alphen Quantum Oscillations in BaSn $_{3}$ Superconductor with Multiple Dirac Fermions