Reduction of Electron Leakage of AlGaN-Based Deep Ultraviolet Laser Diodes Using an Inverse-Trapezoidal Electron Blocking Layer

To improve the optical and electrical properties of AlGaN-based deep ultraviolet lasers, an inverse-trapezoidal electron blocking layer is designed. Lasers with three different structural electron blocking layers of rectangular, trapezoidal and inverse-trapezoidal structures are established. The energy band, electron concentration, electron current density, P–I and V–I characteristics, and the photoelectric conversion efficiency of different structural devices are investigated by simulation. The results show that the optical and electrical properties of the inverse-trapezoidal electron blocking layer laser are better than those of rectangular and trapezoidal structures, owing to the effectively suppressed electron leakage.