CPS Journals
中国物理学会期刊网 物理 物理学报 Chinese Physics B Chinese Physics Letters
Submit Manuscript Peer Review Get e-Alerts

Effects of Low-Damage Plasma Treatment on the Channel 2DEG and Device Characteristics of AlGaN/GaN HEMTs

  • 1School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071

  • 2Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071

  • 3School of Science, Inner Mongolia University of Technology, Hohhot 010051

Funds: Supported by the National Natural Science Foundation of China under Grant Nos. 61634005, 61704124, and 11690042.
More Information   | 
PDF View FullText Get Citation
  • Received Date: November 11, 2019
  • Published Date: January 31, 2020
    Abstract
  • We investigate the effects of remote nitride-based plasma treatment on the channel carrier and device characteristics of AlGaN/GaN high electron mobility transistors (HEMTs). A 200 W NH/N remote plasma causes little degeneration of carrier mobility and an increase in electron density due to surface alteration, which results in a decrease in sheet resistance and an increase in output current by 20–30%. Improved current slump, suppressed gate leakage current, and improved Schottky contact properties are also achieved by using low-damage nitride-based plasma treatment. It is found that NH/N remote plasma treatment is a promising technique for GaN-based HEMTs to modulate the surface conditions and channel properties.
    • FullText(HTML)
  • View FullText
    • References (21)
  • [1]
    Ibbetson J P, Fini P T, Ness K D et al. 2000 Appl. Phys. Lett. 77 250 doi: 10.1063/1.126940}

    CrossRef Google Scholar

    [2]
    Smorchkova I P, Elsass C R, Ibbetson J P et al. 1999 J. Appl. Phys. 86 4520 doi: 10.1063/1.371396}

    CrossRef Google Scholar

    [3]
    Nakaji M, Egawa T, Ishikawa H et al. 2002 Jpn. J. Appl. Phys. 41 L493 doi: 10.1143/JJAP.41.L493}

    CrossRef Google Scholar

    [4]
    Edwards A P, Mittereder J A, Binar S C et al. 2005 IEEE Electron Device Lett. 26 225 doi: 10.1109/LED.2005.844694}

    CrossRef Google Scholar

    [5]
    Guhel Y, Boudart B, Vellas N et al. 2005 Solid-State Electron. 49 1589 doi: 10.1016/j.sse.2005.06.025}

    CrossRef Google Scholar

    [6]
    Meyer David J, Flemish J R and Redwing J M 2006 Appl. Phys. Lett. 89 223523 doi: 10.1063/1.2400100}

    CrossRef Google Scholar

    [7]
    Meyer David J, Flemish J R and Redwing J M 2008 Appl. Phys. Lett. 92 193505 doi: 10.1063/1.2928236}

    CrossRef Google Scholar

    [8]
    Kim J H, Choi H G, Ha M W et al. 2010 Jpn. J. Appl. Phys. 49 04DF05 doi: 10.1143/JJAP.49.04DF05}

    CrossRef Google Scholar

    [9]
    Romero M F, Jiménez A, Miguel Sánchez J et al. 2008 IEEE Electron Device Lett. 29 209 doi: 10.1109/LED.2008.915568}

    CrossRef Google Scholar

    [10]
    Romero M F, Jiménez A, González-Posada F et al. 2012 IEEE Trans. Electron Devices 59 374 doi: 10.1109/TED.2011.2176947}

    CrossRef Google Scholar

    [11]
    Lee N H, Choi W, Lee M et al. 2014 CS MANTECH Conference Denver, Colorado, USA, 1–3 January 2014 p 245

    Google Scholar

    [12]
    Her J C, Cho H J, Yoo C S et al. 2010 Jpn. J. Appl. Phys. 49 041002 doi: 10.1143/JJAP.49.041002}

    CrossRef Google Scholar

    [13]
    Liu X K, Low E K F, Pan J et al. 2011 Appl. Phys. Lett. 99 093504 doi: 10.1063/1.3633104}

    CrossRef Google Scholar

    [14]
    Huang S, Jiang Q, Yang S et al. 2012 IEEE Electron Device Lett. 33 516 doi: 10.1109/LED.2012.2185921}

    CrossRef Google Scholar

    [15]
    Yang S, Tang Z, Wong K Y et al. 2013 IEEE Electron Device Lett. 34 1497 doi: 10.1109/LED.2013.2286090}

    CrossRef Google Scholar

    [16]
    Zhu J J, Ma X H, Xie Y et al. 2015 IEEE Trans. Electron Devices 62 512 doi: 10.1109/TED.2014.2377781}

    CrossRef Google Scholar

    [17]
    Wang L, Mohammed F M and Adesida I 2008 J. Appl. Phys. 103 093516 doi: 10.1063/1.2903482}

    CrossRef Google Scholar

    [18]
    Hierro A, Ringel S A, Hansen M et al. 2000 Appl. Phys. Lett. 77 1499 doi: 10.1063/1.1290042}

    CrossRef Google Scholar

    [19]
    Pearton S J, Zolper J C, Shul R J et al. 1999 J. Appl. Phys. 86 1 doi: 10.1063/1.371145}

    CrossRef Google Scholar

    [20]
    Goyal N and Fjeldly T A 2014 Appl. Phys. Lett. 105 033511 doi: 10.1063/1.4891499}

    CrossRef Google Scholar

    [21]
    Goswami A, Trew R J and Bilbro G L 2014 IEEE Trans. Electron Devices 61 1014 doi: 10.1109/TED.2014.2302797}

    CrossRef Google Scholar

    • Related Articles
  • Supplements (0)

Catalog

    Article views (432) PDF downloads (579) Cited by()
    Turn off MathJax
    Article Contents
    Abstract
    Article Text
    References
    Authors
  • Guideline for Authors
  • Submit and Track a Manuscript
  • Update Your Information
  • Copyright Agreement
  • Ethical Policy
    • Referees
  • Guideline for Referees
  • Submit a Report
  • Volunteer to be a Reviewer
  • Update Your Information
  • Review Policy
    • Browse
  • Accepted
  • In Press
  • Current Issue
  • All Issues
  • Browse by Field
    • About
  • About CPL
  • Editorial Board
  • Editorial Board of Young Scientists
  • Editorial Office

    • Copyright © Chinese Physics Letters

    Address: Institute of Physics, Chinese Academy of Sciences, P.O.Box 603, Beijing 100190 China

    Tel: (86-10) 82649490 or 82649378Fax: 86-10-82649604E-mail: cpl@aphy.iphy.ac.cn

    Supported by: Beijing Renhe Information Technology Co., Ltd. 

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return