Surface Modification for WSe_2 Based Complementary Electronics

High-performance WSe_2 complementary transistors are demonstrated on an individual flake by ozone exposure, which relies on the charge transfer mechanism. This technology is readily feasible for modulating the conductivity type in WSe_2, and the p–n junction presents a high on-off ratio of 10^4. Based on robust p-type transistors and matched output current of n-type WSe_2 transistors, the complementary inverter achieves a high voltage gain of 19.9. Therefore, this strategy may provide an avenue for development of high-performance complementary electronics.