Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells
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Xiao-di Xue,
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Yu Liu,
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Lai-pan Zhu,
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Wei Huang,
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Yang Zhang,
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Xiao-lin Zeng,
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Jing Wu,
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Bo Xu,
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Zhan-guo Wang,
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Yong-hai Chen,
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Wei-feng Zhang
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Abstract
The spin-polarized photocurrent is used to study the in-plane electric field dependent spin transport in undoped InGaAs/AlGaAs multiple quantum wells. In the temperature range of 77–297 K, the spin-polarized photocurrent shows an anisotropic spin transport under different oriented in-plane electric fields. We ascribe this characteristic to two dominant mechanisms: the hot phonon effect and the Rashba spin-orbit effect which is influenced by the in-plane electric fields with different orientations. The formulas are proposed to fit our experiments, suggesting a guide of potential applications and devices.
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Cite this article:
Xiao-di Xue, Yu Liu, Lai-pan Zhu, Wei Huang, Yang Zhang, Xiao-lin Zeng, Jing Wu, Bo Xu, Zhan-guo Wang, Yong-hai Chen, Wei-feng Zhang. Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells[J]. Chin. Phys. Lett., 2019, 36(7): 077201. DOI: 10.1088/0256-307X/36/7/077201
Xiao-di Xue, Yu Liu, Lai-pan Zhu, Wei Huang, Yang Zhang, Xiao-lin Zeng, Jing Wu, Bo Xu, Zhan-guo Wang, Yong-hai Chen, Wei-feng Zhang. Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells[J]. Chin. Phys. Lett., 2019, 36(7): 077201. DOI: 10.1088/0256-307X/36/7/077201
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Xiao-di Xue, Yu Liu, Lai-pan Zhu, Wei Huang, Yang Zhang, Xiao-lin Zeng, Jing Wu, Bo Xu, Zhan-guo Wang, Yong-hai Chen, Wei-feng Zhang. Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells[J]. Chin. Phys. Lett., 2019, 36(7): 077201. DOI: 10.1088/0256-307X/36/7/077201
Xiao-di Xue, Yu Liu, Lai-pan Zhu, Wei Huang, Yang Zhang, Xiao-lin Zeng, Jing Wu, Bo Xu, Zhan-guo Wang, Yong-hai Chen, Wei-feng Zhang. Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells[J]. Chin. Phys. Lett., 2019, 36(7): 077201. DOI: 10.1088/0256-307X/36/7/077201
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