Reduction of Electron Leakage in a Deep Ultraviolet Nitride Laser Diode with a Double-Tapered Electron Blocking Layer

A double-tapered AlGaN electron blocking layer (EBL) is proposed to apply in a deep ultraviolet semiconductor laser diode. Compared with the inverse double-tapered EBL, the laser with the double-tapered EBL shows a higher slope efficiency, which indicates that effective enhancement in the transportation of electrons and holes is achieved. Particularly, comparisons among the double-tapered EBL, the inverse double-tapered EBL, the single-tapered EBL and the inverse single-tapered EBL show that the double-tapered EBL has the best performance in terms of current leakage.