III–V/Si Hybrid Laser Array with DBR on Si Waveguide
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Abstract
We report an eight-channel silicon evanescent laser array operating at continuous wave under room temperature conditions using the selective-area metal bonding technique. The laser array is realized by evanescently coupling the optical gain of InGaAsP multi-quantum wells to the silicon waveguides of varying widths and patterned with distributed Bragg reflector gratings. The lasers have emission peak wavelengths in a range of 1537–1543 nm with a wavelength spacing of about 1.0 nm. The thermal impedances Z_\rm T of these hybrid lasers are evidently lower than those DFB counterparts
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Yan-Ping Li, Li-Jun Yuan, Li Tao, Wei-Xi Chen, Bao-Jun Wang, Jiao-Qing Pan. III–V/Si Hybrid Laser Array with DBR on Si Waveguide[J]. Chin. Phys. Lett., 2019, 36(10): 104201. DOI: 10.1088/0256-307X/36/10/104201
Yan-Ping Li, Li-Jun Yuan, Li Tao, Wei-Xi Chen, Bao-Jun Wang, Jiao-Qing Pan. III–V/Si Hybrid Laser Array with DBR on Si Waveguide[J]. Chin. Phys. Lett., 2019, 36(10): 104201. DOI: 10.1088/0256-307X/36/10/104201
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Yan-Ping Li, Li-Jun Yuan, Li Tao, Wei-Xi Chen, Bao-Jun Wang, Jiao-Qing Pan. III–V/Si Hybrid Laser Array with DBR on Si Waveguide[J]. Chin. Phys. Lett., 2019, 36(10): 104201. DOI: 10.1088/0256-307X/36/10/104201
Yan-Ping Li, Li-Jun Yuan, Li Tao, Wei-Xi Chen, Bao-Jun Wang, Jiao-Qing Pan. III–V/Si Hybrid Laser Array with DBR on Si Waveguide[J]. Chin. Phys. Lett., 2019, 36(10): 104201. DOI: 10.1088/0256-307X/36/10/104201
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