Transport Studies on GaAs/AlGaAs Two-Dimensional Electron Systems Modulated by Triangular Array of Antidots

Funds: Supported by the National Basic Research Program of China under Grant Nos 2015CB921101 and 2014CB920904, and the Strategic Priority Research Program B of Chinese Academy of Sciences under Grant No XDB07010200.
  • Received Date: April 17, 2018
  • Published Date: June 30, 2018
  • Triangular antidot lattices of various periods and aspect ratios are fabricated on high mobility GaAs/AlGaAs two-dimensional electron systems (2DESs), and are characterized by magneto-transport measurements at low temperatures down to 300 mK. Commensurability peaks are generally observed in the magneto-resistivity ρxx, and remarkable similarity between dρxy/dB and ρxx is found. In samples of relatively large aspect ratio d/a, the Aharonov–Bohm-type oscillations are clearly observed in both ρxx and ρxy, as well as the quenching of the Hall resistivity ρxy in the vicinity of B=0. These observations evince the good quality of our samples, and attest to the adequate preparation for fabricating antidot lattices of a reduced period to realize artificial graphene from GaAs/AlGaAs 2DESs.
  • Article Text

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