Thickness Effect on (La_0.26Bi_0.74)_2Ti_4O_11 Thin-Film Composition and Electrical Properties

Hui-Zhen Guo; An-Quan Jiang

doi:10.1088/0256-307X/35/2/026801

Thickness Effect on (La $_{0.26}$ Bi $_{0.74}$ ) $_{2}$ Ti $_{4}$ O $_{11}$ Thin-Film Composition and Electrical Properties

Hui-Zhen Guo,
An-Quan Jiang^**

State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433

Funds: Supported by the Basic Research Project of Shanghai Science and Technology Innovation Action under Grant No 17JC1400300, the National Key Basic Research Program of China under Grant No 2014CB921004, the National Natural Science Foundation of China under Grant No 61674044, and the Program of Shanghai Subject Chief Scientist under Grant No 17XD1400800.

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Received Date: October 24, 2017

Published Date: January 31, 2018

Abstract

Abstract

Highly oriented (00l) (La $_{0.26}$ Bi $_{0.74}$ ) $_{2}$ Ti $_{4}$ O $_{11}$ thin films are deposited on (100) SrTiO $_{3}$ substrates using the pulsed laser deposition technique. The grains form a texture of bar-like arrays along SrTiO $_{3}$ $\langle 110\rangle$ directions for the film thickness above 350 nm, in contrast to spherical grains for the reduced film thickness below 220 nm. X-ray diffraction patterns show that the highly ordered bar-like grains are the ensemble of two lattice-matched monoclinic (La,Bi) $_{4}$ Ti $_{3}$ O $_{12}$ and TiO $_{2}$ components above a critical film thickness. Otherwise, the phase decomposes into the random mixture of Bi $_{2}$ Ti $_{2}$ O $_{7}$ and Bi $_{4}$ Ti $_{3}$ O $_{4}$ spherical grains in thinner films. The critical thickness can increase up to 440 nm as the films are deposited on LaNiO $_{3}$ -buffered SrTiO $_{3}$ substrates. The electrical measurements show the dielectric enhancement of the multi-components, and comprehensive charge injection into interfacial traps between (La,Bi) $_{4}$ Ti $_{3}$ O $_{12}$ and TiO $_{2}$ components occurs under the application of a threshold voltage for the realization of high-charge storage.

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Thickness Effect on (La $_{0.26}$ Bi $_{0.74}$ ) $_{2}$ Ti $_{4}$ O $_{11}$ Thin-Film Composition and Electrical Properties

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Thickness Effect on (La0.26_{0.26}Bi0.74_{0.74})2_{2}Ti4_{4}O11_{11} Thin-Film Composition and Electrical Properties

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Thickness Effect on (La $_{0.26}$ Bi $_{0.74}$ ) $_{2}$ Ti $_{4}$ O $_{11}$ Thin-Film Composition and Electrical Properties