Memristive Behavior Based on Ba-Doped SrTiO_3 Films

The Sr_0.95Ba_0.05TiO_3 (SBT) nanometer film is prepared on the commercially available Pt/TiO_2/SiO_2/Si substrate by radio-frequency magnetron sputtering. The x-ray diffraction pattern and the scanning electron microscope image of the cross-sectional profile of the SBT nanometer film are depicted. The memristive mechanism is inferred. The mathematical model M(q)=12.3656-267.4038|q(t)| is calculated, where M(q) denotes the memristance depending on the quantity of electric charge, and q(t) denotes the quantity of electric charge depending on the time. The theoretical I–V characteristics of the SBT nanometer film are obtained by the mathematical model. The results show that the theoretical I–V characteristics are consistent with the measured I–V characteristics. Moreover, the mathematical model could guide the research on applications of the memristor.