Robust Performance of AlGaN-Channel Metal-Insulator-Semiconductor High-Electron-Mobility Transistors at High Temperatures

Superior characteristics of AlGaN-channel metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) at high temperatures are demonstrated in detail. The temperature coefficient of the maximum saturation drain current for the AlGaN-channel MIS HEMT can be reduced by 50% compared with the GaN-channel HEMT. Moreover, benefiting from the better suppression of gate current and reduced leakage current in the buffer layer, the AlGaN-channel MIS HEMT demonstrates an average breakdown electric field of 1.83 MV/cm at 25^\circ\!C and 1.06 MV/cm at 300^\circ\!C, which is almost 2 times and 3 times respectively larger than that of the reference GaN-channel HEMT. Pulsed mode analyses suggest that the proposed device suffers from smaller current collapse when the temperature reaches as high as 300^\circ\!C.