Influence of Tilted Angle on Effective Linear Energy Transfer in Single Event Effect Tests for Integrated Circuits at 130nm Technology Node

A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130 nm CMOS bulk Si and silicon-on-insulator (SOI) technologies. The effectiveness of linear energy transfer (LET) with a tilted ion beam at the 130 nm technology node is obtained. Tests of tilted angles \theta =0^\circ, 30^\circ and 60^\circ with respect to the normal direction are performed under heavy-ion Kr with certain power whose LET is about 40 MeVcm^2/mg at normal incidence. Error numbers in D flip-flop chains are used to determine their upset sensitivity at different incidence angles. It is indicated that the effective LETs for SOI and bulk Si are not exactly in inverse proportion to \cos \theta, furthermore the effective LET for SOI is more closely in inverse proportion to \cos \theta compared to bulk Si, which are also the well known behavior. It is interesting that, if we design the sample in the dual interlocked storage cell approach, the effective LET in bulk Si will look like inversely proportional to \cos \theta very well, which is also specifically explained.