New Method of Total Ionizing Dose Compact Modeling in Partially Depleted Silicon-on-Insulator MOSFETs

On the basis of a detailed discussion of the development of total ionizing dose (TID) effect model, a new commercial-model-independent TID modeling approach for partially depleted silicon-on-insulator metal-oxide-semiconductor field effect transistors is developed. An exponential approximation is proposed to simplify the trap charge calculation. Irradiation experiments with ^60Co gamma rays for IO and core devices are performed to validate the simulation results. An excellent agreement of measurement with the simulation results is observed.