Radiation Resistance of Fluorine-Implanted PNP Using Gated-Controlled Lateral PNP Transistor Structure

The radiation damage responses of fluorinated and non-fluorinated lateral PNP transistors are studied with specially designed gated-controlled lateral PNP transistors that allow for the extraction of the oxide trapped charge (N_\rm ot) and interface trap (N_\rm it) densities. All the samples are exposed in the Co-60\gamma ray with the dose rate of 0.5 Gy(Si)/s. After the irradiation, the buildup of N_\rm ot and N_\rm it of the samples with total dose is investigated by the gate sweep test technique. The results show that the radiation resistance of fluorinated lateral PNP transistors is significantly enhanced compared with the non-fluorinated ones.