Characterization of La-doped xBiInO_3(1-x)PbTiO_3 Piezoelectric Films Deposited by the Radio-Frequency Magnetron Sputtering Method

La-doped and undoped xBiInO_3-(1-x)PbTiO_3 (BI-PT) thin films are deposited on (101)SrRuO_3/(100)Pt/(100) MgO substrates by the rf-magnetron sputtering method. The structures of the films are characterized by XRD and SEM, and the results indicate that the thin films are grown with mainly (100) oriented and columnar structures. The ferroelectricity and piezoelectricity of the BI-PT films are also measured, and the measured results illustrate that both performances are effectively improved by the La-doping with suitable concentrations. These results will open up wide potential applications of the films in electronic devices.