A 40-GHz Colliding Pulse Mode-Locked Semiconductor Laser
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Abstract
A monolithically active–passive integrated colliding pulse mode-locked semiconductor laser is demonstrated in the InGaAsP/InP material system. The device is mode locked at the second harmonic passive mode-locking regime with a wide mode-locking range. Pulse trains with the repetition rate of 40 GHz, 3-dB rf line width of 25 kHz, the pulse width of 2.5 ps, and a nearly transform-limited time–bandwidth product of 0.53 are obtained.
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Song-Tao Liu, Rui-Kang Zhang, Dan Lu, Qiang Kan, Wei Wang, Chen Ji. A 40-GHz Colliding Pulse Mode-Locked Semiconductor Laser[J]. Chin. Phys. Lett., 2016, 33(6): 064205. DOI: 10.1088/0256-307X/33/6/064205
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Song-Tao Liu, Rui-Kang Zhang, Dan Lu, Qiang Kan, Wei Wang, Chen Ji. A 40-GHz Colliding Pulse Mode-Locked Semiconductor Laser[J]. Chin. Phys. Lett., 2016, 33(6): 064205. DOI: 10.1088/0256-307X/33/6/064205
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Song-Tao Liu, Rui-Kang Zhang, Dan Lu, Qiang Kan, Wei Wang, Chen Ji. A 40-GHz Colliding Pulse Mode-Locked Semiconductor Laser[J]. Chin. Phys. Lett., 2016, 33(6): 064205. DOI: 10.1088/0256-307X/33/6/064205
|
Song-Tao Liu, Rui-Kang Zhang, Dan Lu, Qiang Kan, Wei Wang, Chen Ji. A 40-GHz Colliding Pulse Mode-Locked Semiconductor Laser[J]. Chin. Phys. Lett., 2016, 33(6): 064205. DOI: 10.1088/0256-307X/33/6/064205
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