A 40-GHz Colliding Pulse Mode-Locked Semiconductor Laser

  • Received Date: February 15, 2016
  • Revised Date: May 26, 2016
  • Published Date: May 26, 2016
  • A monolithically active–passive integrated colliding pulse mode-locked semiconductor laser is demonstrated in the InGaAsP/InP material system. The device is mode locked at the second harmonic passive mode-locking regime with a wide mode-locking range. Pulse trains with the repetition rate of 40 GHz, 3-dB rf line width of 25 kHz, the pulse width of 2.5 ps, and a nearly transform-limited time–bandwidth product of 0.53 are obtained.
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