Programmable Logic Based on Large Magnetoresistance of Germanium

We find extremely large low-magnetic-field magnetoresistance (\sim350% at 0.2 T and \sim180% at 0.1 T) in germanium at room temperature and the magnetoresistance is highly sensitive to the surface roughness. This unique magnetoelectric property is applied to fabricate logic architecture which could perform basic Boolean logic including AND, OR, NOR and NAND. Our logic device may pave the way for a high performance microprocessor and may make the germanium family more advanced.