Raman Scattering Modification in Monolayer ReS_2 Controlled by Strain Engineering
-
Abstract
Regulation of optical properties and electronic structure of two-dimensional layered ReS_2 materials has attracted much attention due to their potential in electronic devices. However, the identification of structure transformation of monolayer ReS_2 induced by strain is greatly lacking. In this work, the Raman spectra of monolayer ReS_2 with external strain are determined theoretically based on the density function theory. Due to the lower structural symmetry, deformation induced by external strain can only regulate the Raman mode intensity but cannot lead to Raman mode shifts. Our calculations suggest that structural deformation induced by external strain can be identified by Raman scattering.
Article Text
-
-
-
About This Article
Cite this article:
Ting-Hui Li, Zi-Heng Zhou, Jun-Hong Guo, Fang-Ren Hu. Raman Scattering Modification in Monolayer ReS$_{2}$ Controlled by Strain Engineering[J]. Chin. Phys. Lett., 2016, 33(4): 046201. DOI: 10.1088/0256-307X/33/4/046201
Ting-Hui Li, Zi-Heng Zhou, Jun-Hong Guo, Fang-Ren Hu. Raman Scattering Modification in Monolayer ReS$_{2}$ Controlled by Strain Engineering[J]. Chin. Phys. Lett., 2016, 33(4): 046201. DOI: 10.1088/0256-307X/33/4/046201
|
Ting-Hui Li, Zi-Heng Zhou, Jun-Hong Guo, Fang-Ren Hu. Raman Scattering Modification in Monolayer ReS$_{2}$ Controlled by Strain Engineering[J]. Chin. Phys. Lett., 2016, 33(4): 046201. DOI: 10.1088/0256-307X/33/4/046201
Ting-Hui Li, Zi-Heng Zhou, Jun-Hong Guo, Fang-Ren Hu. Raman Scattering Modification in Monolayer ReS$_{2}$ Controlled by Strain Engineering[J]. Chin. Phys. Lett., 2016, 33(4): 046201. DOI: 10.1088/0256-307X/33/4/046201
|