C-Implanted N-Polar GaN Films Grown by Metal Organic Chemical Vapor Deposition

Funds: Supported by the National Natural Science Foundation of China under Grant Nos 61204006, 61574108, 61334002, 61474086 and 51302306.
  • Received Date: September 26, 2016
  • Published Date: November 30, 2016
  • C-implantation N-polar GaN films are grown on c-plane sapphire substrates by metal organic chemical vapor deposition. C-implantation induces a large number of defects and causes disorder of the lattice structure in the N-polar GaN film. Raman measurements performed on the N-polar GaN film before C-implantation after C-implantation and subsequent annealing at 1050C for 5 min indicate that after annealing the disordered GaN lattice is almost recovered. High resolution x-ray diffraction shows that after implantation there is an obvious increase of screw-dislocation densities, and the densities of edge dislocation show slight change. Carbon implantation can induce deep acceptors in GaN, thus the background carriers induced by the high oxygen incorporation in the N-polar GaN film will be partially compensated for, resulting in 25 times the resistivity, which is demonstrated by the temperature-dependent Hall-effect measurement.
  • Article Text

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