A Single Mode Hybrid III–V/Silicon On-Chip Laser Based on Flip-Chip Bonding Technology for Optical Interconnection
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Abstract
A single mode hybrid III–V/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry–Pérot laser structure with micro-structures on an InP ridge waveguide is designed and fabricated on an InP/AlGaInAs multiple quantum well epitaxial layer structure wafer by using i-line lithography. Then, a silicon waveguide platform including a laser mounting stage is designed and fabricated on a silicon-on-insulator substrate. The single mode laser is flip-chip bonded on the laser mounting stage. The lasing light is butt-coupling to the silicon waveguide. The laser power output from a silicon waveguide is 1.3 mW, and the threshold is 37 mA at room temperature and continuous wave operation.
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Hai-Ling Wang, Wan-Hua Zheng. A Single Mode Hybrid III–V/Silicon On-Chip Laser Based on Flip-Chip Bonding Technology for Optical Interconnection[J]. Chin. Phys. Lett., 2016, 33(12): 124207. DOI: 10.1088/0256-307X/33/12/124207
Hai-Ling Wang, Wan-Hua Zheng. A Single Mode Hybrid III–V/Silicon On-Chip Laser Based on Flip-Chip Bonding Technology for Optical Interconnection[J]. Chin. Phys. Lett., 2016, 33(12): 124207. DOI: 10.1088/0256-307X/33/12/124207
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Hai-Ling Wang, Wan-Hua Zheng. A Single Mode Hybrid III–V/Silicon On-Chip Laser Based on Flip-Chip Bonding Technology for Optical Interconnection[J]. Chin. Phys. Lett., 2016, 33(12): 124207. DOI: 10.1088/0256-307X/33/12/124207
Hai-Ling Wang, Wan-Hua Zheng. A Single Mode Hybrid III–V/Silicon On-Chip Laser Based on Flip-Chip Bonding Technology for Optical Interconnection[J]. Chin. Phys. Lett., 2016, 33(12): 124207. DOI: 10.1088/0256-307X/33/12/124207
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